This paper presents a theoretical assessment based on a modification of
Baraff's theory in order to compare the temperature dependence of several
characteristics, including breakdown voltage, noise, efficiency data of
Kanbe and Ando, which strongly substantiates the model. It can be found
that there is an optimum value of RP (high field region) in order to get
minimum value of VBD and response time.
Both n+(front) side and p+(back) side illumination are all taken into
consideration. The excess noise factor Fand noise equivalent power NEP can
be redued if light is incident on p+ surface, while efficiency is nearly
equal. Thus proposed a RAPD structure by considering direction radiation
incidence which makes the photo-generation first and avalanche
multiplication latter will reduce the multiplication noise substantially.
A comparison of the characteristics between PIN APD and RAPD has been
made. Finally methods for device fabrication are considered.
本論文係以修正的Baraff理論作基礎，分析並加以比較鍺、矽及砷化鎵PIN 與穿透崩潰光二極體的一些溫度特性，諸如崩潰電壓，雜訊，效率及反應時間等。所討論的光波長範圍，矽係於0.633–1.06微米之間，鍺係於1.06–1.63 微米之間而砷化鎵係於 0.90–0.96微米之間，鍺係於1.06–1.63 微米之間而砷化鎵係於0.90–0.96 微米之間。
低–高–低穿透崩潰光二極體的雜質分佈曲線十分複雜，故欲準確地分析其特性十分困難，本論文提出大一較簡易的模型以分析此元件，所得理論的結果與Kanbe 及Ando實驗結果十分符合，故能支持此模型竹成立。由分析結果可知有一最佳的崩潰區域寬度RP以求得最小值的崩潰電壓及反應時間。
本論文中對於光之照射方向亦加以考慮，當光由P+側照射，對於穿透崩潰光二極體，其雜訊可以降低，而效率與由n+側照射者幾乎相等。如此可以確定對於RAPD型光二極體，若光照射時，先產生光載子，經漂移，然後崩潰可以降低其雜訊。其次，將PIN 光二極體及低–高–低崩潰光二極體特性作一比較，並簡單地討論元件之製造方法。